Category:
Power MOSFET
Dimensions:
5.2 x 6.15 x 0.95mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
6.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Package Type:
PowerFLAT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
26.5 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2085 pF@ 10 V
Length:
5.2mm
Pin Count:
8
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Series:
STripFET V
Maximum Gate Source Voltage:
±8 V
Height:
0.95mm
Typical Turn-On Delay Time:
14.4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
500mV @ 250µA (Min)
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
3mOhm @ 12.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
26.5 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
60W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2085 pF @ 10 V
Mounting Type:
Surface Mount
Series:
STripFET™ V
Supplier Device Package:
PowerFlat™ (5x6)
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL100
ECCN:
EAR99
