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This is manufactured by Rohm Semiconductor. The manufacturer part number is R6076ENZ1C9. It has a maximum Rds On and voltage of 42mohm @ 44.4a, 10v. It features n-channel 600v 76a (tc) 120w (tc) through hole to-247. The product's input capacitance at maximum includes 6500pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has a 600v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 260nc @ 10v. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 120w (tc). The continuous current drain at 25°C is 76a (tc). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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