Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.13 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.65mm
Width:
3.7mm
Length:
6.7mm
Maximum Drain Source Resistance:
150 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.9 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
33 Weeks
Detailed Description:
P-Channel 30V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
NTF5P03
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Rds On (Max) @ Id, Vgs:
100mOhm @ 5.2A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
950pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.7A (Ta)
Customer Reference:
Power Dissipation (Max):
1.56W (Ta)
Technology:
MOSFET (Metal Oxide)
