Toshiba Semiconductor and Storage TPN5900CNH,L1Q

TPN5900CNH-L1Q Toshiba Semiconductor and Storage TPN5900CNH,L1Q
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 200µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
59mOhm @ 4.5A, 10V
edacadModel:
TPN5900CNH,L1Q Models
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 10 V
RoHS Status:
RoHS Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4815269
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
700mW (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 75 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPN5900
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN5900CNH,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 59mohm @ 4.5a, 10v. The maximum gate charge and given voltages include 7 nc @ 10 v. The product is rohs compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 150 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 700mw (ta), 39w (tc). The product's input capacitance at maximum includes 600 pf @ 75 v. It has a long 12 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-tson advance (3.1x3.1) is the supplier device package value. The continuous current drain at 25°C is 9a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpn5900, a base product number of the product. The product is designated with the ear99 code number.

Reviews

  • Be the first to review.


FAQs

Yes. You can also search TPN5900CNH,L1Q on website for other similar products.
We accept all major payment methods for all products including ET11555819. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TPN5900CNH,L1Q directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TPN5900CNH,L1Q. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TPN5900CNH,L1Q.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11555819 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11555819.
Yes. We ship TPN5900CNH,L1Q Internationally to many countries around the world.