Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
PRICED TO CLEAR:
Yes
Typical Gate Charge @ Vgs:
6.4 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
340 pF @ 48 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.7 W
Series:
STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Typical Turn-On Delay Time:
6.4 ns
Maximum Drain Source Resistance:
160 mΩ
Detailed Description:
P-Channel 60V 3A (Tj) 2.7W (Tc) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
STS3P
Gate Charge (Qg) (Max) @ Vgs:
6.4nC @ 10V
Rds On (Max) @ Id, Vgs:
160mOhm @ 1.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
340pF @ 48V
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3A (Tj)
Customer Reference:
Power Dissipation (Max):
2.7W (Tc)
Technology:
MOSFET (Metal Oxide)
