Rohm Semiconductor RTU002P02T106

RTU002P02T106 Rohm Semiconductor
RTU002P02T106
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
1.5Ohm @ 250mA, 4.5V
Detailed Description:
P-Channel 20V 250mA (Ta) 200mW (Ta) Surface Mount UMT3
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 1mA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Supplier Device Package:
UMT3
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Packaging:
Cut Tape (CT)
Operating Temperature:
FET Type:
P-Channel
Customer Reference:
Package / Case:
SC-70, SOT-323
Power Dissipation (Max):
200mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
250mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RTU002P02T106. It has a maximum Rds On and voltage of 1.5ohm @ 250ma, 4.5v. It features p-channel 20v 250ma (ta) 200mw (ta) surface mount umt3. The product's input capacitance at maximum includes 50pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. umt3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type p-channel. Moreover, the product comes in sc-70, sot-323. The product carries maximum power dissipation 200mw (ta). The continuous current drain at 25°C is 250ma (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RTU002P02(Datasheets)

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