Nexperia USA Inc. PSMN4R3-100ES,127

Enrgtech Part No: ET11509940
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Manufacturer Part No:
PSMN4R3-100ES,127
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Manufacturer: Nexperia USA Inc.

PSMN4R3-100ES-127 Nexperia USA Inc. PSMN4R3-100ES,127

Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

ROHS3 Compliant

Operating Temperature:

-55°C ~ 175°C (TJ)

Package / Case:

TO-262-3 Long Leads, I2PAK, TO-262AA

Rds On (Max) @ Id, Vgs:

4.3mOhm @ 25A, 10V

title:

PSMN4R3-100ES,127

Vgs(th) (Max) @ Id:

4V @ 1mA

REACH Status:

REACH Unaffected

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Drain to Source Voltage (Vdss):

100 V

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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PSMN4R3-100ES,127. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 4.3mohm @ 25a, 10v. The typical Vgs (th) (max) of the product is 4v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 338w (tc). The product's input capacitance at maximum includes 9900 pf @ 50 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 170 nc @ 10 v. i2pak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

PSMN4R3-100ES(Datasheets)

Mult DEV Label Change 12/Jun/2024(PCN Design/Specification)

Label Chg 12/Mar/2017(PCN Packaging)

All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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