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Diodes Incorporated 2N7002E-7-F

2N7002E-7-F Diodes Incorporated
Diodes Incorporated

Product Information

Manufacturer Standard Lead Time:
30 Weeks
Detailed Description:
N-Channel 60V 250mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
2N7002
Gate Charge (Qg) (Max) @ Vgs:
0.22nC @ 4.5V
Rds On (Max) @ Id, Vgs:
3Ohm @ 250mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Diodes Incorporated
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
250mA (Ta)
Customer Reference:
Power Dissipation (Max):
370mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Diodes Incorporated. The manufacturer part number is 2N7002E-7-F. It has typical 30 weeks of manufacturer standard lead time. It features n-channel 60v 250ma (ta) 370mw (ta) surface mount sot-23-3. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: 2n7002. The maximum gate charge and given voltages include 0.22nc @ 4.5v. It has a maximum Rds On and voltage of 3ohm @ 250ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The diodes incorporated's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 50pf @ 25v. The product is available in surface mount configuration. sot-23-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 250ma (ta). The product carries maximum power dissipation 370mw (ta). This product use mosfet (metal oxide) technology.

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Diodes RoHS 3 Cert(Environmental Information)
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Mult Dev Site Add 1/Jul/2020(PCN Assembly/Origin)
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Bond Wire 3/May/2011(PCN Design/Specification)
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Green Encapsulate 15/May/2008(PCN Design/Specification)
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2N7002E Datasheet(Datasheets)

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FAQs

Yes. You can also search 2N7002E-7-F on website for other similar products.
We accept all major payment methods for all products including ET11501767. Please check your shopping cart at the time of order.
You can order Diodes Incorporated brand products with 2N7002E-7-F directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Incorporated 2N7002E-7-F. You can also check on our website or by contacting our customer support team for further order details on Diodes Incorporated 2N7002E-7-F.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11501767 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Diodes Incorporated" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11501767.
Yes. We ship 2N7002E-7-F Internationally to many countries around the world.