Rohm Semiconductor RP1E090RPTR

RP1E090RPTR Rohm Semiconductor
RP1E090RPTR
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
16.9mOhm @ 9A, 10V
Detailed Description:
P-Channel 30V 9A (Ta) 2W (Ta) Surface Mount MPT6
Input Capacitance (Ciss) (Max) @ Vds:
3000pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 5V
Supplier Device Package:
MPT6
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
6-SMD, Flat Leads
Power Dissipation (Max):
2W (Ta)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RP1E090RPTR. It has a maximum Rds On and voltage of 16.9mohm @ 9a, 10v. It features p-channel 30v 9a (ta) 2w (ta) surface mount mpt6. The product's input capacitance at maximum includes 3000pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 30nc @ 5v. mpt6 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 6-smd, flat leads. The product carries maximum power dissipation 2w (ta). The continuous current drain at 25°C is 9a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RP1E090RP(Datasheets)

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