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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6J215FE(TE85L,F. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 59mohm @ 3a, 4.5v. The maximum gate charge and given voltages include 10.4 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 1v @ 1ma. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 630 pf @ 10 v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. es6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 3.4a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6j215, a base product number of the product. The product is designated with the ear99 code number.
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