Maximum Continuous Drain Current:
456 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
1.9V
Package Type:
VSON-CLIP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
95 nC @ 4.5 V, 192 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
195 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
820 μΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.9V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
0.59mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
250 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD16570Q5BT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/4968291
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta), 195W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
14000 pF @ 12 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (5x6)
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD16570
ECCN:
EAR99
