Rohm Semiconductor RUE002N02TL

RUE002N02TL Rohm Semiconductor
RUE002N02TL
RUE002N02TL
Rohm Semiconductor

Product Information

Base Part Number:
RUE002
Detailed Description:
N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3
Input Capacitance (Ciss) (Max) @ Vds:
25pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 2.5V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 200mA, 2.5V
Supplier Device Package:
EMT3
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SC-75, SOT-416
Power Dissipation (Max):
150mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RUE002N02TL. Base Part Number: rue002. It features n-channel 20v 200ma (ta) 150mw (ta) surface mount emt3. The product's input capacitance at maximum includes 25pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The drive voltage (maximum and minimum Rds On) of the product includes 1.2v, 2.5v. It has a maximum Rds On and voltage of 1.2ohm @ 200ma, 2.5v. emt3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-75, sot-416. The product carries maximum power dissipation 150mw (ta). The continuous current drain at 25°C is 200ma (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RUE002N02(Datasheets)

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