Toshiba Semiconductor and Storage TPN6R003NL,LQ
Product Information
Detailed Description:
N-Channel 30V 27A (Tc) 700mW (Ta), 32W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id:
2.3V @ 200µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
TPN6R003
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 13.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 15V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-TSON Advance (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Customer Reference:
Power Dissipation (Max):
700mW (Ta), 32W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN6R003NL,LQ. It features n-channel 30v 27a (tc) 700mw (ta), 32w (tc) surface mount 8-tson advance (3.3x3.3). The typical Vgs (th) (max) of the product is 2.3v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: tpn6r003. The maximum gate charge and given voltages include 17nc @ 10v. It has a maximum Rds On and voltage of 6mohm @ 13.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1400pf @ 15v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-tson advance (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 27a (tc). The product carries maximum power dissipation 700mw (ta), 32w (tc). This product use mosfet (metal oxide) technology.
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