Texas Instruments CSD13385F5T

CSD13385F5T Texas Instruments
Texas Instruments

Product Information

Manufacturer Standard Lead Time:
6 Weeks
Detailed Description:
N-Channel 12V 4.3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-SMD, No Lead
Base Part Number:
CSD13385
Gate Charge (Qg) (Max) @ Vgs:
5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
19mOhm @ 900mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
8V
Input Capacitance (Ciss) (Max) @ Vds:
674pF @ 6V
Mounting Type:
Surface Mount
Series:
FemtoFET™
Supplier Device Package:
3-PICOSTAR
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.3A (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Texas Instruments. The manufacturer part number is CSD13385F5T. It has typical 6 weeks of manufacturer standard lead time. It features n-channel 12v 4.3a (ta) 500mw (ta) surface mount 3-picostar. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-smd, no lead. Base Part Number: csd13385. The maximum gate charge and given voltages include 5nc @ 4.5v. It has a maximum Rds On and voltage of 19mohm @ 900ma, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The texas instruments's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is 8v. The product's input capacitance at maximum includes 674pf @ 6v. The product is available in surface mount configuration. The product femtofet™, is a highly preferred choice for users. 3-picostar is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4.3a (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology.

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