Category:
Power MOSFET
Dimensions:
5.8 x 5 x 1.1mm
Maximum Continuous Drain Current:
65 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.1V
Maximum Drain Source Resistance:
16.1 mΩ
Package Type:
SON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.8 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
410 pF @ 15 V
Length:
5.8mm
Pin Count:
8
Typical Turn-Off Delay Time:
5.7 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Typical Turn-On Delay Time:
4.7 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
10.8mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs:
3.6 nC @ 4.5 V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD17507Q5A Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2403767
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta)
standardLeadTime:
6 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
530 pF @ 15 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 65A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD17507
ECCN:
EAR99
