Infineon Technologies IRF5210PBF

IRF5210PBF Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
60mOhm @ 24A, 10V
Gate Charge (Qg) (Max) @ Vgs:
180 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
IRF5210PBF Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/812147
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2700 pF @ 25 V
standardLeadTime:
10 Weeks
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF5210
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IRF5210PBF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 60mohm @ 24a, 10v. The maximum gate charge and given voltages include 180 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 200w (tc). The product's input capacitance at maximum includes 2700 pf @ 25 v. It has a long 10 weeks standard lead time. The product is available in through hole configuration. The product hexfet®, is a highly preferred choice for users. to-220ab is the supplier device package value. The continuous current drain at 25°C is 40a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to irf5210, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Wafer Chgs 31/Mar/2021(PCN Assembly/Origin)
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Barcode Label Update 24/Feb/2017(PCN Packaging)
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IR Part Numbering System(Other Related Documents)

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FAQs

Yes. You can also search IRF5210PBF on website for other similar products.
We accept all major payment methods for all products including ET11464178. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IRF5210PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IRF5210PBF. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IRF5210PBF.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11464178 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11464178.
Yes. We ship IRF5210PBF Internationally to many countries around the world.