Rohm Semiconductor SCT3080ALGC11

SCT3080ALGC11 Rohm Semiconductor
Rohm Semiconductor

Product Information

Base Part Number:
SCT3080
Detailed Description:
N-Channel 650V 30A (Tc) 134W (Tc) Through Hole TO-247N
Input Capacitance (Ciss) (Max) @ Vds:
571pF @ 500V
Drive Voltage (Max Rds On, Min Rds On):
18V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5.6V @ 5mA
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
+22V, -4V
Gate Charge (Qg) (Max) @ Vgs:
48nC @ 18V
Rds On (Max) @ Id, Vgs:
104mOhm @ 10A, 18V
Supplier Device Package:
TO-247N
Packaging:
Tube
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-247-3
Power Dissipation (Max):
134W (Tc)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
SiCFET (Silicon Carbide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is SCT3080ALGC11. Base Part Number: sct3080. It features n-channel 650v 30a (tc) 134w (tc) through hole to-247n. The product's input capacitance at maximum includes 571pf @ 500v. The drive voltage (maximum and minimum Rds On) of the product includes 18v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5.6v @ 5ma. The product has a 650v drain to source voltage. The maximum Vgs rate is +22v, -4v. The maximum gate charge and given voltages include 48nc @ 18v. It has a maximum Rds On and voltage of 104mohm @ 10a, 18v. to-247n is the supplier device package value. In addition, tube is the available packaging type of the product. The product has 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 134w (tc). The continuous current drain at 25°C is 30a (tc). This product use sicfet (silicon carbide) technology. The rohm semiconductor's product offers user-desired applications.

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TO-247N Taping Spec(Datasheets)
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SCT3080AL(Datasheets)
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TO-247N SiC Part Marking(Other Related Documents)
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TO-247N Inner Structure(Other Related Documents)
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SiC Flammability(Other Related Documents)
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MOS-3GTHD Reliability Test(Other Related Documents)
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SCT3080AL ESD Data(Environmental Information)
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TO-247N MOS Constitution Material List(Environmental Information)
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SiC Whisker Info(Environmental Information)
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SiC Level 1 MSL(Environmental Information)

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