Fairchild/ON Semiconductor FQU2N50BTU_WS

FQU2N50BTU_WS Fairchild/ON Semiconductor
Fairchild/ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
6 Weeks
Vgs(th) (Max) @ Id:
3.7V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
8nC @ 10V
Rds On (Max) @ Id, Vgs:
5.3 Ohm @ 800mA, 10V
FET Type:
N-Channel
Standard Package:
70
Manufacturer:
Fairchild/ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
230pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
I-Pak
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
1.6A (Tc)
Power Dissipation (Max):
2.5W (Ta), 30W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by Fairchild/ON Semiconductor. The manufacturer part number is FQU2N50BTU_WS. It has typical 6 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 3.7v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum gate charge and given voltages include 8nc @ 10v. It has a maximum Rds On and voltage of 5.3 ohm @ 800ma, 10v. It carries FET type n-channel. It is available in the standard package of 70. The fairchild/on semiconductor's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 230pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. i-pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 1.6a (tc). The product carries maximum power dissipation 2.5w (ta), 30w (tc). This product use mosfet (metal oxide) technology.

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FQU2N50B(Datasheets)

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