Rohm Semiconductor RW1A030APT2CR

RW1A030APT2CR Rohm Semiconductor
RW1A030APT2CR
Rohm Semiconductor

Product Information

Base Part Number:
RW1A030
Detailed Description:
P-Channel 12V 3A (Ta) 700mW (Ta) Surface Mount 6-WEMT
Input Capacitance (Ciss) (Max) @ Vds:
2700pF @ 6V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
-8V
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 4.5V
Rds On (Max) @ Id, Vgs:
42mOhm @ 3A, 4.5V
Supplier Device Package:
6-WEMT
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-563, SOT-666
Power Dissipation (Max):
700mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RW1A030APT2CR. Base Part Number: rw1a030. It features p-channel 12v 3a (ta) 700mw (ta) surface mount 6-wemt. The product's input capacitance at maximum includes 2700pf @ 6v. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 12v drain to source voltage. The maximum Vgs rate is -8v. The maximum gate charge and given voltages include 22nc @ 4.5v. It has a maximum Rds On and voltage of 42mohm @ 3a, 4.5v. 6-wemt is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sot-563, sot-666. The product carries maximum power dissipation 700mw (ta). The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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