Maximum Continuous Drain Current:
53 A
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3.6V
Package Type:
VSON-CLIP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
44 nC @ 10 V
Channel Type:
N
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
83 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
16.6 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
14.5mOhm @ 10A, 10V
title:
CSD19537Q3T
Vgs(th) (Max) @ Id:
3.6V @ 250µA
REACH Status:
REACH Affected
edacadModel:
CSD19537Q3T Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/5455662
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.8W (Ta), 83W (Tc)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1680 pF @ 50 V
Mounting Type:
Surface Mount
Series:
NexFET™
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 10 V
Supplier Device Package:
8-VSON-CLIP (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
50A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19537Q3
ECCN:
EAR99
