Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
55 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
37 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NVD541
Detailed Description:
N-Channel 60V 24A (Tc) 55W (Tc) Surface Mount DPAK
Input Capacitance (Ciss) (Max) @ Vds:
1200pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
48nC @ 10V
Rds On (Max) @ Id, Vgs:
37mOhm @ 24A, 10V
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
55W (Tc)
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
