Vishay Siliconix SI1077X-T1-GE3

SI1077X-T1-GE3 Vishay Siliconix
SI1077X-T1-GE3
Vishay Siliconix

Product Information

Detailed Description:
P-Channel 20V 1.75A (Ta) 330mW (Ta) Surface Mount SC-89 (SOT-563F)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Base Part Number:
SI1077
Gate Charge (Qg) (Max) @ Vgs:
31.1nC @ 8V
Rds On (Max) @ Id, Vgs:
78mOhm @ 1.8A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
965pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SC-89 (SOT-563F)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.75A (Ta)
Customer Reference:
Power Dissipation (Max):
330mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SI1077X-T1-GE3. It features p-channel 20v 1.75a (ta) 330mw (ta) surface mount sc-89 (sot-563f). The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. Base Part Number: si1077. The maximum gate charge and given voltages include 31.1nc @ 8v. It has a maximum Rds On and voltage of 78mohm @ 1.8a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 965pf @ 10v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. sc-89 (sot-563f) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.75a (ta). The product carries maximum power dissipation 330mw (ta). This product use mosfet (metal oxide) technology.

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Wafer Fab Addition 22/Jun/2015(PCN Assembly/Origin)
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SI1077X-T1-GE3(Datasheets)
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New Material 24/Mar/2021(PCN Design/Specification)

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