Vishay Siliconix SIS435DNT-T1-GE3

SIS435DNT-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs:
5.4mOhm @ 13A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
180 nC @ 8 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH info available upon request
edacadModel:
SIS435DNT-T1-GE3 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/3983647
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.7W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5700 pF @ 10 V
standardLeadTime:
27 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIS435
ECCN:
EAR99
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIS435DNT-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 900mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8. It has a maximum Rds On and voltage of 5.4mohm @ 13a, 4.5v. The maximum gate charge and given voltages include 180 nc @ 8 v. The product is rohs3 compliant. In addition, it is reach info available upon request. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.7w (ta), 39w (tc). The product's input capacitance at maximum includes 5700 pf @ 10 v. It has a long 27 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® 1212-8 is the supplier device package value. The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sis435, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
Manufacturing Capacity Expansion 27/Jul/2023(PCN Assembly/Origin)
pdf icon
SIS435DNT(Datasheets)

Reviews

  • Be the first to review.

FAQs

Yes. You can also search SIS435DNT-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET11422555. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIS435DNT-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIS435DNT-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIS435DNT-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11422555 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11422555.
Yes. We ship SIS435DNT-T1-GE3 Internationally to many countries around the world.