Microsemi Corporation APT100MC120JCU2

APT100MC120JCU2 Microsemi Corporation
Microsemi Corporation

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Rds On (Max) @ Id, Vgs:
17mOhm @ 100A, 20V
Detailed Description:
N-Channel 1200V 143A (Tc) 600W (Tc) Chassis Mount SOT-227
Input Capacitance (Ciss) (Max) @ Vds:
5960pF @ 1000V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
2.3V @ 2mA
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
+25V, -10V
Gate Charge (Qg) (Max) @ Vgs:
360nC @ 20V
Supplier Device Package:
SOT-227
Drive Voltage (Max Rds On, Min Rds On):
20V
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
SOT-227-4, miniBLOC
Power Dissipation (Max):
600W (Tc)
Current - Continuous Drain (Id) @ 25°C:
143A (Tc)
Technology:
SiCFET (Silicon Carbide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT100MC120JCU2. It has typical 16 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 17mohm @ 100a, 20v. It features n-channel 1200v 143a (tc) 600w (tc) chassis mount sot-227. The product's input capacitance at maximum includes 5960pf @ 1000v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 2.3v @ 2ma. The product has a 1200v drain to source voltage. The maximum Vgs rate is +25v, -10v. The maximum gate charge and given voltages include 360nc @ 20v. sot-227 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sot-227-4, minibloc. The product carries maximum power dissipation 600w (tc). The continuous current drain at 25°C is 143a (tc). This product use sicfet (silicon carbide) technology. The microsemi corporation's product offers user-desired applications.

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