Category:
Power MOSFET
Dimensions:
1 x 1.49 x 0.28mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1.49mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
8 V
Package Type:
DSBGA
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.9 nC @ 4 V
Channel Type:
P
Typical Input Capacitance @ Vds:
703 pF @ -4 V
Length:
1mm
Pin Count:
6
Forward Transconductance:
14S
Typical Turn-Off Delay Time:
58 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.75 W
Series:
NexFET
Maximum Gate Source Voltage:
-6 V
Height:
0.28mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
53 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFBGA, DSBGA
Rds On (Max) @ Id, Vgs:
19.4mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
6.3 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD23203WT Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/5051701
Drain to Source Voltage (Vdss):
8 V
Vgs (Max):
-6V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
750mW (Ta)
standardLeadTime:
6 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
914 pF @ 4 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-DSBGA (1x1.5)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD23203
ECCN:
EAR99
