Category:
Power MOSFET
Dimensions:
10 x 4.5 x 15.7mm
Maximum Continuous Drain Current:
70 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
26 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2010 pF @ 50 V
Length:
10mm
Pin Count:
3
Forward Transconductance:
50S
Typical Turn-Off Delay Time:
55 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
72 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.7mm
Typical Turn-On Delay Time:
30 ns
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
12.8 mΩ
Base Part Number:
NDPL07
Detailed Description:
N-Channel 100V 70A (Ta) 2.1W (Ta), 72W (Tc) Through Hole TO-220-3
Input Capacitance (Ciss) (Max) @ Vds:
2010pF @ 50V
Drive Voltage (Max Rds On, Min Rds On):
10V, 15V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 1mA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
26nC @ 10V
Rds On (Max) @ Id, Vgs:
10.8mOhm @ 35A, 15V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
2.1W (Ta), 72W (Tc)
Current - Continuous Drain (Id) @ 25°C:
70A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
