Vishay Siliconix SI2312BDS-T1-GE3

SI2312BDS-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
31mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 4.5 V
Vgs(th) (Max) @ Id:
850mV @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
SI2312BDS-T1-GE3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/1995513
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
750mW (Ta)
standardLeadTime:
11 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
3.9A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2312
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI2312BDS-T1-GE3. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 31mohm @ 5a, 4.5v. The maximum gate charge and given voltages include 12 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 850mv @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 750mw (ta). It has a long 11 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. sot-23-3 (to-236) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 3.9a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si2312, a base product number of the product. The product is designated with the ear99 code number.

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New Solder Plating Site 18/Apr/2023(PCN Assembly/Origin)
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Si2312BDS(Datasheets)
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Material Compliance(Environmental Information)
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Vishay Aluminum Capacitor and Energy Storage REACH(Environmental Information)

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FAQs

Yes. You can also search SI2312BDS-T1-GE3 on website for other similar products.
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You will get a confirmation email regarding your order of Vishay Siliconix SI2312BDS-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SI2312BDS-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11392013 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11392013.
Yes. We ship SI2312BDS-T1-GE3 Internationally to many countries around the world.