Rohm Semiconductor RT1C060UNTR

RT1C060UNTR Rohm Semiconductor
Rohm Semiconductor

Product Information

Base Part Number:
RT1C060
Detailed Description:
N-Channel 20V 6A (Ta) 650mW (Ta) Surface Mount 8-TSST
Input Capacitance (Ciss) (Max) @ Vds:
870pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 4.5V
Rds On (Max) @ Id, Vgs:
28mOhm @ 6A, 4.5V
Supplier Device Package:
8-TSST
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-SMD, Flat Lead
Power Dissipation (Max):
650mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RT1C060UNTR. Base Part Number: rt1c060. It features n-channel 20v 6a (ta) 650mw (ta) surface mount 8-tsst. The product's input capacitance at maximum includes 870pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 20v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 11nc @ 4.5v. It has a maximum Rds On and voltage of 28mohm @ 6a, 4.5v. 8-tsst is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-smd, flat lead. The product carries maximum power dissipation 650mw (ta). The continuous current drain at 25°C is 6a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RT1C060UN(Datasheets)

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