ON Semiconductor NTTFS4C10NTWG

NTTFS4C10NTWG ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
17 Weeks
Detailed Description:
N-Channel 30V 8.2A (Ta), 44A (Tc) 790mW (Ta), 23.6W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NTTFS4
Gate Charge (Qg) (Max) @ Vgs:
18.6nC @ 10V
Rds On (Max) @ Id, Vgs:
7.4mOhm @ 30A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
993pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8.2A (Ta), 44A (Tc)
Customer Reference:
Power Dissipation (Max):
790mW (Ta), 23.6W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTTFS4C10NTWG. It has typical 17 weeks of manufacturer standard lead time. It features n-channel 30v 8.2a (ta), 44a (tc) 790mw (ta), 23.6w (tc) surface mount 8-wdfn (3.3x3.3). The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. Base Part Number: nttfs4. The maximum gate charge and given voltages include 18.6nc @ 10v. It has a maximum Rds On and voltage of 7.4mohm @ 30a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 993pf @ 15v. The product is available in surface mount configuration. 8-wdfn (3.3x3.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8.2a (ta), 44a (tc). The product carries maximum power dissipation 790mw (ta), 23.6w (tc). This product use mosfet (metal oxide) technology.

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Reliability Data Update 09/Jul/2020(PCN Assembly/Origin)
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NTTFS4C10N(Datasheets)

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