Maximum Drain Source Voltage:
700 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
2.5 W
Series:
DN2470
Maximum Gate Source Voltage:
20 V
Height:
2.29mm
Width:
6.1mm
Length:
6.6mm
Maximum Drain Source Resistance:
42 Ω
Package Type:
TO-252
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
170 mA
Forward Diode Voltage:
1.8V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
FET Feature:
Depletion Mode
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
42Ohm @ 100mA, 0V
title:
DN2470K4-G
Vgs(th) (Max) @ Id:
-
REACH Status:
REACH Unaffected
edacadModel:
DN2470K4-G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
0V
edacadModelUrl:
/en/models/4902747
Drain to Source Voltage (Vdss):
700 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
2.5W (Ta)
Qualification:
-
standardLeadTime:
4 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
540 pF @ 25 V
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Supplier Device Package:
TO-252 (DPAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
170mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DN2470
ECCN:
EAR99
