Category:
Power MOSFET
Dimensions:
10.6 x 4.8 x 16mm
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
4.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1100 pF @ -25 V
Length:
10.6mm
Pin Count:
3
Forward Transconductance:
5.4S
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
42 W
Maximum Gate Source Voltage:
±20 V
Height:
16mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
6.3V
Maximum Drain Source Resistance:
140 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3 Full Pack, Isolated Tab
Rds On (Max) @ Id, Vgs:
140mOhm @ 7.2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 25 V
standardLeadTime:
10 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFI9
ECCN:
EAR99
