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Infineon Technologies BSZ180P03NS3EGATMA1

BSZ180P03NS3EGATMA1 Infineon Technologies
Infineon Technologies

Product Information

Detailed Description:
P-Channel 30V 9A (Ta), 39.5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount PG-TSDSON-8
Vgs(th) (Max) @ Id:
3.1V @ 48µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
BSZ180
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Rds On (Max) @ Id, Vgs:
18mOhm @ 20A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
Infineon Technologies
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
2220pF @ 15V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TSDSON-8
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta), 39.5A (Tc)
Customer Reference:
Power Dissipation (Max):
2.1W (Ta), 40W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is BSZ180P03NS3EGATMA1. It features p-channel 30v 9a (ta), 39.5a (tc) 2.1w (ta), 40w (tc) surface mount pg-tsdson-8. The typical Vgs (th) (max) of the product is 3.1v @ 48µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: bsz180. The maximum gate charge and given voltages include 30nc @ 10v. It has a maximum Rds On and voltage of 18mohm @ 20a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The infineon technologies's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 2220pf @ 15v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. pg-tsdson-8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9a (ta), 39.5a (tc). The product carries maximum power dissipation 2.1w (ta), 40w (tc). This product use mosfet (metal oxide) technology.

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Multiple Changes 09/Jul/2014(PCN Other)
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Mult Dev Reel Design Chg 2/Dec/2019(PCN Packaging)
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Mult Dev Pkg Box Chg 3/Jan/2018(PCN Packaging)
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Part Number Guide(Other Related Documents)

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FAQs

Yes. You can also search BSZ180P03NS3EGATMA1 on website for other similar products.
We accept all major payment methods for all products including ET11325015. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with BSZ180P03NS3EGATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies BSZ180P03NS3EGATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies BSZ180P03NS3EGATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11325015 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11325015.
Yes. We ship BSZ180P03NS3EGATMA1 Internationally to many countries around the world.