Rohm Semiconductor RW1E025RPT2CR

RW1E025RPT2CR Rohm Semiconductor
RW1E025RPT2CR
Rohm Semiconductor

Product Information

Base Part Number:
RW1E025
Detailed Description:
P-Channel 30V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT
Input Capacitance (Ciss) (Max) @ Vds:
480pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
5.2nC @ 5V
Rds On (Max) @ Id, Vgs:
75mOhm @ 2.5A, 10V
Supplier Device Package:
6-WEMT
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
6-SMD, Flat Leads
Power Dissipation (Max):
700mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RW1E025RPT2CR. Base Part Number: rw1e025. It features p-channel 30v 2.5a (ta) 700mw (ta) surface mount 6-wemt. The product's input capacitance at maximum includes 480pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 5.2nc @ 5v. It has a maximum Rds On and voltage of 75mohm @ 2.5a, 10v. 6-wemt is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 6-smd, flat leads. The product carries maximum power dissipation 700mw (ta). The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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