Toshiba Semiconductor and Storage TPW4R008NH,L1Q

TPW4R008NH-L1Q Toshiba Semiconductor and Storage TPW4R008NH,L1Q
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
59 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 1mA
edacadModel:
TPW4R008NH,L1Q Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5117194
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
5300 pF @ 40 V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-DSOP Advance
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
116A (Tc)
Power Dissipation (Max):
800mW (Ta), 142W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPW4R008
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPW4R008NH,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 4mohm @ 50a, 10v. The maximum gate charge and given voltages include 59 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 1ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 5300 pf @ 40 v. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-dsop advance is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 116a (tc). The product carries maximum power dissipation 800mw (ta), 142w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpw4r008, a base product number of the product. The product is designated with the ear99 code number.

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