Rohm Semiconductor QS5U12TR

QS5U12TR Rohm Semiconductor
QS5U12TR
Rohm Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 30V 2A (Ta) 1.25W (Ta) Surface Mount TSMT5
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-5 Thin, TSOT-23-5
Base Part Number:
QS5U12
Gate Charge (Qg) (Max) @ Vgs:
3.9nC @ 4.5V
Rds On (Max) @ Id, Vgs:
100mOhm @ 2A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
175pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT5
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Customer Reference:
Power Dissipation (Max):
1.25W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is QS5U12TR. The FET features of the product include schottky diode (isolated). It has typical 16 weeks of manufacturer standard lead time. It features n-channel 30v 2a (ta) 1.25w (ta) surface mount tsmt5. The typical Vgs (th) (max) of the product is 1.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-5 thin, tsot-23-5. Base Part Number: qs5u12. The maximum gate charge and given voltages include 3.9nc @ 4.5v. It has a maximum Rds On and voltage of 100mohm @ 2a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The rohm semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 175pf @ 10v. The product is available in surface mount configuration. tsmt5 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2a (ta). The product carries maximum power dissipation 1.25w (ta). This product use mosfet (metal oxide) technology.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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QS5U12 ESD Data(Environmental Information)
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TSMT5 Constitution Material List(Environmental Information)
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TSMT Package Updates 24/Dec/2014(PCN Design/Specification)
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QS5U12(Datasheets)
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TSMT5 TR Taping Spec(Datasheets)
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FAQs

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