Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
18.6 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
70 W
Series:
STripFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
2.4mm
Width:
6.2mm
Length:
6.6mm
Minimum Gate Threshold Voltage:
1V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Maximum Drain Source Resistance:
40 mΩ
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
28mOhm @ 12A, 10V
title:
STD30PF03LT4
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STD30PF03LT4 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/654489
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1670 pF @ 25 V
Mounting Type:
Surface Mount
Series:
STripFET™ II
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 5 V
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD30
ECCN:
EAR99
