Rohm Semiconductor RSS090N03FU6TB

RSS090N03FU6TB Rohm Semiconductor
RSS090N03FU6TB
RSS090N03FU6TB
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
15mOhm @ 9A, 10V
Detailed Description:
N-Channel 30V 9A (Ta) 2W (Ta) Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
810pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
20V
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 5V
Supplier Device Package:
8-SOP
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max):
2W (Ta)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RSS090N03FU6TB. It has a maximum Rds On and voltage of 15mohm @ 9a, 10v. It features n-channel 30v 9a (ta) 2w (ta) surface mount 8-sop. The product's input capacitance at maximum includes 810pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is 20v. The maximum gate charge and given voltages include 15nc @ 5v. 8-sop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The product carries maximum power dissipation 2w (ta). The continuous current drain at 25°C is 9a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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Mult Dev EOL 29/Oct/2018(PCN Obsolescence/ EOL)
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RSS090N03(Datasheets)

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