Category:
Power MOSFET
Dimensions:
5.4 x 6.35 x 0.95mm
Maximum Continuous Drain Current:
4.5 A
Transistor Material:
Si
Width:
6.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
950 mΩ
Package Type:
PowerFLAT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
450 pF @ 100 V
Length:
5.4mm
Pin Count:
8
Typical Turn-Off Delay Time:
32 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
42 W
Series:
MDmesh K5, SuperMESH5
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
0.95mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
950mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STL8N80K5 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4156655
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
450 pF @ 100 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
SuperMESH5™
Supplier Device Package:
PowerFlat™ (5x6)
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL8N80
ECCN:
EAR99
