Fairchild/ON Semiconductor FQA13N50C_F109

FQA13N50C_F109 Fairchild/ON Semiconductor
Fairchild/ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
17 Weeks
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
56nC @ 10V
Rds On (Max) @ Id, Vgs:
480 mOhm @ 6.75A, 10V
FET Type:
N-Channel
Standard Package:
30
Manufacturer:
Fairchild/ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2055pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-3PN
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
13.5A (Tc)
Power Dissipation (Max):
218W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
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This is manufactured by Fairchild/ON Semiconductor. The manufacturer part number is FQA13N50C_F109. It has typical 17 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. The maximum gate charge and given voltages include 56nc @ 10v. It has a maximum Rds On and voltage of 480 mohm @ 6.75a, 10v. It carries FET type n-channel. It is available in the standard package of 30. The fairchild/on semiconductor's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2055pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-3pn is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 13.5a (tc). The product carries maximum power dissipation 218w (tc). This product use mosfet (metal oxide) technology.

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Assembly Site Transfer 06/Apr/2015(PCN Assembly/Origin)
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FQA13N50C_F109(Datasheets)

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