ON Semiconductor NTLUS3C18PZTBG

NTLUS3C18PZTBG ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
18 Weeks
Detailed Description:
P-Channel 12V 4.4A (Ta) 660mW (Ta) Surface Mount 6-UDFN (1.6x1.6)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerUFDFN
Base Part Number:
NTLUS3
Gate Charge (Qg) (Max) @ Vgs:
15.8nC @ 4.5V
Rds On (Max) @ Id, Vgs:
24mOhm @ 7A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1570pF @ 6V
Mounting Type:
Surface Mount
Supplier Device Package:
6-UDFN (1.6x1.6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
4.4A (Ta)
Customer Reference:
Power Dissipation (Max):
660mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTLUS3C18PZTBG. It has typical 18 weeks of manufacturer standard lead time. It features p-channel 12v 4.4a (ta) 660mw (ta) surface mount 6-udfn (1.6x1.6). The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-powerufdfn. Base Part Number: ntlus3. The maximum gate charge and given voltages include 15.8nc @ 4.5v. It has a maximum Rds On and voltage of 24mohm @ 7a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 12v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 1570pf @ 6v. The product is available in surface mount configuration. 6-udfn (1.6x1.6) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 4.4a (ta). The product carries maximum power dissipation 660mw (ta). This product use mosfet (metal oxide) technology.

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NTLUS3C18PZ(Datasheets)

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