Category:
Power MOSFET
Dimensions:
19.96 x 5.13 x 26.16mm
Maximum Continuous Drain Current:
44 A
Transistor Material:
Si
Width:
5.13mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
130 mΩ
Package Type:
TO-264AA
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
330 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
8900 pF @ 25 V
Length:
19.96mm
Pin Count:
3
Typical Turn-Off Delay Time:
100 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
560 W
Series:
HiperFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
26.16mm
Typical Turn-On Delay Time:
40 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Rds On (Max) @ Id, Vgs:
130mOhm @ 22A, 10V
title:
IXFK44N60
Vgs(th) (Max) @ Id:
4.5V @ 8mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
560W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
8900 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™
Gate Charge (Qg) (Max) @ Vgs:
330 nC @ 10 V
Supplier Device Package:
TO-264AA (IXFK)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
44A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFK44
ECCN:
EAR99
