Rohm Semiconductor R6015ANZC8

R6015ANZC8 Rohm Semiconductor
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
300mOhm @ 7.5A, 10V
Detailed Description:
N-Channel 600V 15A (Tc) 110W (Tc) Through Hole TO-3PF
Input Capacitance (Ciss) (Max) @ Vds:
1700pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4.15V @ 1mA
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
50nC @ 10V
Supplier Device Package:
TO-3PF
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-3P-3 Full Pack
Power Dissipation (Max):
110W (Tc)
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is R6015ANZC8. It has a maximum Rds On and voltage of 300mohm @ 7.5a, 10v. It features n-channel 600v 15a (tc) 110w (tc) through hole to-3pf. The product's input capacitance at maximum includes 1700pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4.15v @ 1ma. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 50nc @ 10v. to-3pf is the supplier device package value. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-3p-3 full pack. The product carries maximum power dissipation 110w (tc). The continuous current drain at 25°C is 15a (tc). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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R6xxxxNZC8 03/Dec/2019(PCN Obsolescence/ EOL)
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Mult Dev EOL 26/Jan/2020(PCN Obsolescence/ EOL)

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