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This is manufactured by Rohm Semiconductor. The manufacturer part number is R6035ENZC8. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3 full pack. It has a maximum Rds On and voltage of 102mohm @ 18.1a, 10v. The typical Vgs (th) (max) of the product is 4v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 120w (tc). The product's input capacitance at maximum includes 2720 pf @ 25 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 110 nc @ 10 v. to-3pf is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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