Toshiba Semiconductor and Storage SSM3J356R,LF

SSM3J356R-LF Toshiba Semiconductor and Storage SSM3J356R,LF
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
20 Weeks
Detailed Description:
P-Channel 60V 2A (Ta) 1W (Ta) Surface Mount SOT-23F
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-3 Flat Leads
Base Part Number:
SSM3J356
Gate Charge (Qg) (Max) @ Vgs:
8.3nC @ 10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 1A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:
330pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
SOT-23F
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Customer Reference:
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J356R,LF. It has typical 20 weeks of manufacturer standard lead time. It features p-channel 60v 2a (ta) 1w (ta) surface mount sot-23f. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-3 flat leads. Base Part Number: ssm3j356. The maximum gate charge and given voltages include 8.3nc @ 10v. It has a maximum Rds On and voltage of 300mohm @ 1a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is +10v, -20v. The product's input capacitance at maximum includes 330pf @ 10v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. sot-23f is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology.

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