Category:
Power MOSFET
Dimensions:
2 x 2 x 0.75mm
Maximum Continuous Drain Current:
4.6 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Maximum Drain Source Resistance:
250 mΩ
Package Type:
WDFN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.4 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
427 pF@ 15 V
Length:
2mm
Pin Count:
6
Typical Turn-Off Delay Time:
14.2 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.75mm
Typical Turn-On Delay Time:
4.8 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
Schottky Diode (Isolated)
Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 30V 2.5A (Tj) 710mW (Ta) Surface Mount 6-WDFN (2x2)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Base Part Number:
NTLJF41
Gate Charge (Qg) (Max) @ Vgs:
6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
70mOhm @ 2A, 4.5V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
427pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tj)
Customer Reference:
Power Dissipation (Max):
710mW (Ta)
Technology:
MOSFET (Metal Oxide)
