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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK17N65W,S1F. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 200mohm @ 8.7a, 10v. The typical Vgs (th) (max) of the product is 3.5v @ 900µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 165w (tc). It has a long 52 weeks standard lead time. The product's input capacitance at maximum includes 1800 pf @ 300 v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. The maximum gate charge and given voltages include 45 nc @ 10 v. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 17.3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk17n65, a base product number of the product. The product is designated with the ear99 code number.
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