Microsemi Corporation APTM10UM01FAG

APTM10UM01FAG Microsemi Corporation
Microsemi Corporation

Product Information

Manufacturer Standard Lead Time:
36 Weeks
Rds On (Max) @ Id, Vgs:
1.6mOhm @ 275A, 10V
Detailed Description:
N-Channel 100V 860A (Tc) 2500W (Tc) Chassis Mount SP6
Input Capacitance (Ciss) (Max) @ Vds:
60000pF @ 25V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
4V @ 12mA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
2100nC @ 10V
Supplier Device Package:
SP6
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
SP6
Power Dissipation (Max):
2500W (Tc)
Current - Continuous Drain (Id) @ 25°C:
860A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM10UM01FAG. It has typical 36 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 1.6mohm @ 275a, 10v. It features n-channel 100v 860a (tc) 2500w (tc) chassis mount sp6. The product's input capacitance at maximum includes 60000pf @ 25v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 4v @ 12ma. The product has a 100v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 2100nc @ 10v. sp6 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sp6. The product carries maximum power dissipation 2500w (tc). The continuous current drain at 25°C is 860a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.

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