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The IRF8113TRPBF is a high-geared power MOSFET combining advanced technology with efficient design. It delivers exceptional switching characteristics for optimised power control in different applications.
The Infineon Technologies IRF8113TRPBF is a powerful MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) created to handle high-current applications. As part of the OptiMOS family, it brings enhanced efficiency and reliability to various power electronics applications, from power supplies and DC-DC converters to motor drives and renewable energy systems.
The IRF8113TRPBF is engineered to handle high currents with ease. With a low on-state resistance (RDS (on)) and high drain current rating, it can efficiently manage substantial power levels, making it ideal for power-hungry applications.
Infineon Technologies has incorporated advanced design techniques and materials in the IRF8113TRPBF to ensure enhanced efficiency and overall performance. Its low conduction and switching losses translate to reduced power dissipation and increased energy efficiency, making it suitable for high-performance power electronics.
The IRF8113TRPBF is part of Infineon's OptiMOS family, representing a cutting-edge series of power MOSFETs. OptiMOS devices are known for their low losses, high ruggedness, and excellent thermal performance, all of which contribute to the component's superior performance in power applications.
The IRF8113TRPBF's characteristics make it highly versatile in various applications, including:
For more information please check the datasheets.
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