Category:
Power MOSFET
Dimensions:
15.9 x 5.3 x 20.3mm
Maximum Continuous Drain Current:
74 A
Transistor Material:
Si
Width:
5.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
35 mΩ
Package Type:
Max247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
360 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
10100 pF@ 50 V
Length:
15.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
440 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
447 W
Series:
MDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
20.3mm
Typical Turn-On Delay Time:
50 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
35mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs:
360 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STY80NM60N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1983210
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
447W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10100 pF @ 50 V
Mounting Type:
Through Hole
Series:
MDmesh™ II
Supplier Device Package:
MAX247™
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
74A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STY80N
ECCN:
EAR99
