Deliver to
United Kingdom
Due to adverse weather conditions in the UK, some orders might face delayed processing. We apologise for the inconvenience and thank you for your patience.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6J503NU,LF(T. It has typical 16 weeks of manufacturer standard lead time. It features p-channel 20v 6a (ta) 1w (ta) surface mount 6-udfnb (2x2). The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. The maximum gate charge and given voltages include 12.8nc @ 10v. It has a maximum Rds On and voltage of 32.4 mohm @ 3a, 4.5v. It carries FET type p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 840pf @ 10v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. 6-udfnb (2x2) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm6j503nulf(tct ssm6j503nulfct ssm6j503nulfct-nd.
Basket Total:
£ 0
